0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 s m d ty p e m o s f e t 1.gate 2.soruce 3.drain features ultra low on-resist ance n-cha nnel m osfet fast s w itc hing. absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-to-sour ce voltage v gs 12 v continuo us drain curent, @ v gs= 4.5v,t a =25 1.2 a continuo us drain curent, @ v gs= 4.5v,t a =70 0.95 a pulsed drain current *1 i dm 7.4 a pow er dissi pation @ t a =25 p d 540 m w thermal resis tance,j unction- to-am bient r ja 230 /w junct ion and storage tem pera ture rang e t j ,t stg -55 to +150 *1.reptitive rating:pulse w idth lim ited by m ax .junct ion tem pera ture. *2.i sd 0.93a,d i /d t 90a/ s, v dd v (br)dss ,t j 150 i d s d g 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com s m d ty p e m o s f e t irl ml 24 02 s m d ty p e m o s f e t product specification
s m d ty p e m o s f e t el ectrical characteristics t a = 2 5 parameter sym bol test c onditons min typ ma x unit dra in-source breakdow n voltage v dss i d = 250 a, v gs = 0v 20 v v ds = 16 v, v gs = 0v 1 v ds = 16 v, v gs = 0v, t j =125 25 gate-sour ce leada ge i gss v gs = 12v,v ds =0v 100 na gate threshold voltag e v gs(th) v ds = v gs , i d = 250 a 0.70 v i d = 0.93a, v gs = 4.5v 0.25 i d = 0.47a, v gs =2.7v 0.35 forw ard tra nsconductance g fs v ds = 10 v, i d = 0.47 a 1.3 s input c apacitance c i ss v ds = 15v, 110 output capacit ance c oss v gs = 0 v , 51 rev erse transfer capacit ance c rss f= 1mhz 25 total gate charg e q g 2.6 3.9 gate-sour ce charge q gs 0.41 0.62 gate-d rain ch arge q gd 1.1 1.7 turn- on delay ti m e t d(on ) 2.5 rise ti m e t r 9.5 turn- off delay ti m e t d(of f) r d = 11 ,r g = 6.2 9.7 fall ti m e t f 4.8 rev erse recove ry tim e t rr 25 38 ns rev erse recove ry charg e q rr 16 24 nc con tinuous s ource curren t i s 0.54 pulsed s ource curren t *1 i sm 7.4 diode forw ard v oltage v sd t j =25 ,v gs = 0 v , i s = 0.93 a *2 1.2 v *1 repe tit ive rating;pu lse width lim ited by m ax .junct ion tem pera ture. * 2 puls e w idth 300 s, duty cycle 2% a i dss gate-sour ce leakage c urr ent stati c drain -source on- re sis tance r ds(on) t j =25 , i f = 0.93 a , di / dt = 100 a/ s *2 ns pf a mo sfet sym bo l s how ing the integral re ver se p-n junction diode v ds =16v ,v gs = 4.5 v , i d = 0.93 a nc v dd = 10 v, mi d = 0.93a, irl ml 24 02 s d g 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com s m d ty p e m o s f e t product specification
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